PART |
Description |
Maker |
BSS8402DW-7-F BSS8402DW08 |
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 115 mA, 60 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Incorporated Diodes, Inc.
|
SI6543DQ |
N/P-Channel 30-V (D-S) Pair Dual N- and P-Channel 30-V (D-S) MOSFET
|
Vishay Siliconix
|
SI9928DY |
N/P-Channel 20-V (D-S) Pair Complimentary 20-V (D-S) MOSFET
|
Vishay Siliconix
|
SI9942DY |
Complimentary 20-V (D-S) MOSFET N/p-channel 30-V (D-S) Pair
|
Vishay Siliconix
|
TPC8207 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,6A I(D),SO
|
Toshiba Semiconductor
|
ARF477FL |
RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
|
Microsemi Corporation
|
BL-BJ33V4V-1 |
Dual N-Channel & Dual P-Channel Matched MOSFET Pair, Enhancement Mode, 14L CDIP LED AlGaInP/GaAs Super Orange Low current requirement.
|
Bright LED Electronics Corp.
|
LS1608-100-RM LS1608-331-RM LS1608-103-RM LS1608-1 |
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L SOIC, EPAD Enabled 5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L SOIC, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L SOIC, EPAD Enabled Surface Mount Power Inductors 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD Surface Mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD Surface Mount Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L SOIC, EPAD Enabled
|
ICE Components, Inc. ICE COMPONENTS INC
|
BL-BG33R4V-1 |
2mV Dual N-Channel Matched MOSFET Pair, Enhancement Mode, 8L PDIP
|
Bright LED Electronics Corp.
|
STS3C2F100 |
N-CHANNEL 100V - 0.110 OHM - 3A SO-8 P-CHANNEL 100V - 0.320 OHM - 1.5A SO-8 COMPLEMENTARY PAIR STripFET POWER MOSFET
|
ST Microelectronics
|
ALD114935SA ALD114835 ALD114835PC ALD114835SC ALD1 |
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
|
ALD[Advanced Linear Devices]
|
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